Pattern printability for off-axis incident light in extreme ultraviolet lithography

Journal of Microlithography, Microfabrication and Microsystems

Volumn 2, Issue 1, 2003, Pages 27-33

  Sugawara, Minoru ^a   Ito, Masaaki ^a   Ogawa, Taro ^a   Hoshino, Eiichi ^a   Chiba, Akira ^a   Okazaki, Shinji ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Aberrations; MEF; Off axis incident light; OPC; OPE

Indexed keywords

EID: 0942289439     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1530571     Document Type: Article

References (5)

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2. P. Yan, G. Zhans, A. Ma, and T. Liane, "TaN EUVL mask fabrication and characterization," Proc. SPIE 4343, 409-414 (2001).
3. T. Pistor and A. R. Neureuther, "Calculatina aerial images from EUV masks," Proc. SPIE 3676, 679-696 (1999).
4. T. Pistor, "Electromagnetic simulation and modeling with applications in lithography," Thesis, doctor of philosophy in electrical engineering, University of California at Berkeley (2001).
5. C. G. C. Krautschik, M. Ito, I. Nishiyama, and K. Otaki, "The impact of the EUV mask phase response on the asymmetry of bossung curves as predicted by rigorous EUV mask simulations," Proc. SPIE 4343, 392-401 (2001).