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Volumn 5377, Issue PART 2, 2004, Pages 721-729

Advanced model formulations for optical and process proximity correction

Author keywords

Etching; OPC; Process proximity correction; Process window; PSM; Variable threshold

Indexed keywords

AERIAL IMAGES; PROCESS PROXIMITY CORRECTIONS; PROCESS WINDOWS; VARIABLE THRESHOLDS;

EID: 3843098115     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.544258     Document Type: Conference Paper
Times cited : (15)

References (12)
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  • 2
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    • Hybrid PPC methodology using the individual model of photo and etch processes and implementation for the sub-100 nm node
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    • S. Choi, J. Park, C. Park, W. Chung, I. Kim, D. Kim, M. Yoo, J. Kong, "Hybrid PPC methodology using the individual model of photo and etch processes and implementation for the sub-100 nm node" in Optical Microlithography XVI, Proceedings of SPIE Vol. 5040 (2003), p. 1176.
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    • Choi, S.1    Park, J.2    Park, C.3    Chung, W.4    Kim, I.5    Kim, D.6    Yoo, M.7    Kong, J.8
  • 4
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  • 7
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    • Y. Granik, "Dry Etch Proximity Modeling in Mask Fabrication", Photomask and Next-Generation Lithography Mask Technology X, Proc. SPIE Vol. 5130, p. 86, Aug 2003.
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    • (2002) J. Vac. Sci. Technol. A , Issue.5 , pp. 20
    • Cooperberg, D.J.1    Vahedi, V.2    Gottscho, R.A.3
  • 9
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    • Fast proximity correction with zone sampling
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  • 10
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.