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Volumn 50, Issue 1-3, 1997, Pages 174-179

Microscopic gain theory for group III nitride semiconductor quantum wells

Author keywords

Carrier carrier interaction; Optical properties; Semiconductors

Indexed keywords

LIGHT ABSORPTION; NITRIDES; NUMERICAL ANALYSIS; OPTICAL PROPERTIES; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS;

EID: 0031356699     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00158-X     Document Type: Article
Times cited : (3)

References (17)
  • 5
    • 0031551601 scopus 로고    scopus 로고
    • Microscopic theory of gain in an inhomogeneously broadened InGaN/AlGaN quantum well laser
    • submitted
    • W.W. Chow, A.F. Wright, A. Girndt, F. Jahnke, S.W. Koch, Microscopic theory of gain in an inhomogeneously broadened InGaN/AlGaN quantum well laser, Appl. Phys. Lett, (submitted 1997).
    • (1997) Appl. Phys. Lett,
    • Chow, W.W.1    Wright, A.F.2    Girndt, A.3    Jahnke, F.4    Koch, S.W.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.