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Volumn 602, Issue 2, 2008, Pages 525-533

Electronic and atomic structure of the 4 H-SiC (1 over(1, ̄) 0 2) -c (2 × 2) surface

Author keywords

Atomic structure; Low energy electron diffraction (LEED); Photoelectron spectroscopy; Scanning tunneling microscopy; Semiconducting surfaces; Silicon carbide; Single crystal surfaces; Surface relaxation and reconstruction

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTAL SURFACES; SURFACE RELAXATION;

EID: 38349174728     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.11.012     Document Type: Article
Times cited : (16)

References (36)
  • 1
    • 38349118779 scopus 로고    scopus 로고
    • S.E. Saddow, A. Agrawal, in: Advances in Silicon Carbide Processing and Applications, 2004, ISBN 1-58053-740-5.
  • 4
    • 31144462673 scopus 로고    scopus 로고
    • Choyke W.J., Matsunami H., and Pensl G. (Eds), Springer, Berlin
    • Starke U. In: Choyke W.J., Matsunami H., and Pensl G. (Eds). Silicon Carbide, Recent Major Advances (2004), Springer, Berlin 281
    • (2004) Silicon Carbide, Recent Major Advances , pp. 281
    • Starke, U.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.