SiC pore surfaces: Surface studies of 4H-SiC(1 1̄-02) and 4H-SiC(1̄ 102̄)

Applied Physics Letters

Volumn 88, Issue 3, 2006, Pages 1-3

  Starke, U ^a   Lee, W Y ^a   Coletti, C ^b   Saddow, S E ^b   Devaty, R P ^c   Choyke, W J ^c  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF SOUTH FLORIDA   (United States)

^c UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN ETCHING; ISOMORPHIC ORIENTATIONS; OXYGEN-FREE; SIC PORE SURFACES;

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; ETCHING; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; SILICON CARBIDE;

SURFACE CHEMISTRY;

EID: 31144457962     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2166484     Document Type: Article

References (4)

1. Y. Shishkin, Y. Ke, R. P. Devaty and W. J. Choyke, Mater. Sci. Forum 483, 251 (2005).
2. U. Starke, in Silicon Carbide, Recent Major Advances, edited by, W. J. Choyke, H. Matsunami, and, G. Pensl, (Springer, Berlin, 2004), p. 281.
3. R. L. Myers, Y. Shishkin, O. Kordina, and S. E. Saddow, J. Cryst. Growth 285, 483 (2005).
4. J. Bernhardt, J. Schardt, U. Starke, and K. Heinz, Appl. Phys. Lett. 74, 1084 (1999).