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Volumn 103, Issue 1, 2008, Pages

Enhancement of Si-O hybridization in low-temperature grown ultraviolet photo-oxidized Si O2 film observed by x-ray absorption and photoemission spectroscopy

(10) Tsai, H M a Ray, S C a Pao, C W a Chiou, J W a,d Huang, C L a Du, C H a Pong, W F a,e Tsai, M H b Fukano, A c Oyanagi, H c

a TAMKANG UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

d NATIONAL UNIVERSITY OF KAOHSIUNG (Taiwan)

e LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING STRUCTURES; ULTRAVIOLET PHOTON OXIDIZED STRUCTURES;

DIELECTRIC PROPERTIES; FILM GROWTH; PHOTOOXIDATION; ULTRAVIOLET RADIATION; VALENCE BANDS; X RAY ABSORPTION SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON COMPOUNDS;

EID: 38149106668 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2828144 Document Type: Article

Times cited : (11)

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