Influence of microcrystallization on noise in boron-doped silicon film

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 12, 2007, Pages 4292-4297

  Li, Shibin ^a   Wu, Zhiming ^a   Li, Wei ^a   Liao, Naiman ^a   Yu, Junsheng ^a   Jiang, Yadong ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

LOW-FREQUENCY NOISE; MICROCRYSTALLINE HYDROGENATED SILICON; RANDOM TELEGRAPH SWITCHING (RTS); SEMICONDUCTOR SYSTEMS;

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; MICROSTRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; X RAY DIFFRACTION;

THIN FILMS;

EID: 38049110890     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200723235     Document Type: Article

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