Low frequency plasma deposition and characterization of Si 1-xGex:H,F films

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 91-96

  Ambrosio, R ^a   Torres, A ^a   Kosarev, A ^a   Ilinski, A ^b   Zuniga C ^a   Abramov, A S ^c  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^b BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ACTIVATION ENERGY; DECOMPOSITION; ETCHING; FERMI LEVEL; ION BOMBARDMENT; MOLECULAR VIBRATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SECONDARY ION MASS SPECTROMETRY; THIN FILMS;

DEPOSITION RATES; GAS PHASE; RADIO FREQUENCY (RF) DISCHARGES; SOLID PHASE;

SILICON ALLOYS;

EID: 2942536296     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.028     Document Type: Conference Paper

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