Anisotropic excess noise within a-Si:H

Solid-State Electronics

Volumn 39, Issue 6, 1996, Pages 807-812

  Craig, B I ^a   Watson, R J ^a   Unewisse, M H ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC EXCESS NOISE; HYDROGENATED AMORPHOUS SILICON; NONOHMIC CHARACTERISTICS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; RANDOM TELEGRAPH SWITCHING NOISE;

ANISOTROPY; CHEMICAL VAPOR DEPOSITION; ENERGY GAP; HYDROGENATION; PLASMA APPLICATIONS; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE; SPUTTER DEPOSITION; SWITCHING SYSTEMS; TELEGRAPH SYSTEMS;

AMORPHOUS SILICON;

EID: 0030172132     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00341-X     Document Type: Article

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