Characterization of carbon-doped InSb diode grown by molecular beam epitaxy

Journal of Physics D: Applied Physics

Volumn 41, Issue 2, 2008, Pages

  Pham, H T ^a   Yoon, S F ^a   Chen, K P ^a   Boning, D ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; X RAY DIFFRACTION;

CARBON DOPED INSB SAMPLES; INSB DIODE; TRAP ASSISTED TUNNELLING MODEL;

INDIUM COMPOUNDS;

EID: 38049101145     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/2/025304     Document Type: Article

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