Deep level transient spectroscopy measurements on heterostructure InSb/InAlSb diodes

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 468-471

  Stewart, A G ^a   Cherkaoui, K ^b   Hall, R S ^c   Crowder, J G ^a  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGIES; MAJORITY CARRIER TRAPS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE MEASUREMENT;

SEMICONDUCTOR DIODES;

EID: 1642298163     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/031     Document Type: Article

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