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Thin Solid Films

Volumn 401, Issue 1-2, 2001, Pages 279-283

Silicon behavior in GaN grown by radiofrequency plasma molecular beam epitaxy

(2) Li, Wei a Li, Aizhen a

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

Author keywords

Annealing; Halogens; Impurities; Molecular beam epitaxy; Nitrides

Indexed keywords

CRYSTAL IMPURITIES; GALLIUM NITRIDE; HALOGEN COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SILICON;

RADIOFREQUENCY PLASMA MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035904979 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01607-8 Document Type: Article

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.