Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method

Journal of Crystal Growth

Volumn 310, Issue 3, 2008, Pages 639-645

  Wei, Xuecheng ^a   Zhao, Youwen ^a   Dong, Zhiyuan ^a   Li, Jinmin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Defects; A1. X ray diffraction; A2. Growth from vapor; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; LIGHT ABSORPTION; PHOTOLUMINESCENCE SPECTROSCOPY; RAMAN SCATTERING; ZINC OXIDE;

CHEMICAL VAPOR TRANSPORT; LATTICE PERFECTION; TRAPPING EFFECT; ULTRAVIOLET LUMINESCENCE;

SINGLE CRYSTALS;

EID: 37849011600     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.10.080     Document Type: Article

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