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Volumn 24, Issue SUPPL., 2006, Pages 4-7

Growth of ZnO single crystal by chemical vapor transport method

Author keywords

Chemical vapor transport; Single crystal growth; Zinc oxide

Indexed keywords

ANNEALING; CARBON; CRYSTAL GROWTH; GALLIUM NITRIDE; QUARTZ; SAPPHIRE; SILICON WAFERS; SINGLE CRYSTALS; TUBES (COMPONENTS); VAPORS;

EID: 33745526056     PISSN: 10020721     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (8)

References (20)
  • 1
    • 0035932264 scopus 로고    scopus 로고
    • Recent advances in ZnO materials and devices
    • Look D C. Recent advances in ZnO materials and devices[J]. Mater. Sci. Eng., 2001, B80: 383.
    • (2001) Mater. Sci. Eng. , vol.B80 , pp. 383
    • Look, D.C.1
  • 2
    • 4444379304 scopus 로고    scopus 로고
    • P-type doping and devices based on ZnO
    • Look D C, Claflin B. P-type doping and devices based on ZnO[J]. Phys. Stat. Sol. (b), 2004, 241: 624.
    • (2004) Phys. Stat. Sol. (b) , vol.241 , pp. 624
    • Look, D.C.1    Claflin, B.2
  • 5
    • 6444220325 scopus 로고    scopus 로고
    • Recent progress in processing and properties of ZnO
    • Pearton S J, Norton D P, Ip K, et al. Recent progress in processing and properties of ZnO[J]. Progress in Mater. Sci., 2005, 50: 293.
    • (2005) Progress in Mater. Sci. , vol.50 , pp. 293
    • Pearton, S.J.1    Norton, D.P.2    Ip, K.3
  • 8
    • 17144371565 scopus 로고    scopus 로고
    • Growth of 2 inch ZnO bulk single crystal by the hydrothermal method
    • Katsumi Maeda, Mitsuru Sato, Ikuo Niikura, et al. Growth of 2 inch ZnO bulk single crystal by the hydrothermal method[J]. Semicond. Sci. Technol., 2005, 20: S49.
    • (2005) Semicond. Sci. Technol. , vol.20
    • Maeda, K.1    Sato, M.2    Niikura, I.3
  • 9
    • 0242496473 scopus 로고    scopus 로고
    • Growth of the 2-in-size bulk ZnO single crystals by the hydrothermal method
    • Eriko Ohshima, Hiraku Ogino, Ikuo Niikura, et al. Growth of the 2-in-size bulk ZnO single crystals by the hydrothermal method[J]. J. Crystal Growth, 2004, 260: 166.
    • (2004) J. Crystal Growth , vol.260 , pp. 166
    • Ohshima, E.1    Ogino, H.2    Niikura, I.3
  • 10
    • 0343602860 scopus 로고    scopus 로고
    • ZnO growth by chemical vapour transport
    • Ntep J M, Hassani S Said, Lusson A, et al. ZnO growth by chemical vapour transport[J]. J. Crystal Growth, 1999, 207: 30.
    • (1999) J. Crystal Growth , vol.207 , pp. 30
    • Ntep, J.M.1    Said, H.S.2    Lusson, A.3
  • 11
    • 15344350687 scopus 로고    scopus 로고
    • Growth of zinc oxide by chemical vapor transport
    • Makoto Mikami, Toshiaki Eto, Wang Jifeng, et al. Growth of zinc oxide by chemical vapor transport[J]. J. Crystal Growth, 2005, 276: 389.
    • (2005) J. Crystal Growth , vol.276 , pp. 389
    • Mikami, M.1    Eto, T.2    Wang, J.3
  • 12
    • 4544241011 scopus 로고    scopus 로고
    • Study of the ZnO crystal growth by vapour transport methods
    • Tena Zaera R, Artinez Tomás M C, Hassani S, et al. Study of the ZnO crystal growth by vapour transport methods[J]. J. Cryst. Growth, 2004, 270: 711.
    • (2004) J. Cryst. Growth , vol.270 , pp. 711
    • Tena, Z.R.1    Artinez, T.M.C.2    Hassani, S.3
  • 13
    • 27344459453 scopus 로고    scopus 로고
    • A new approach to the growth of ZnO by vapour transport
    • Munoz Sanjose V, Tena Zaera R, Martinez Tomás M C, et al. A new approach to the growth of ZnO by vapour transport[J]. Phys. Stat. Sol. (c), 2005, 2: 1106.
    • (2005) Phys. Stat. Sol. (c) , vol.2 , pp. 1106
    • Munoz, S.V.1    Tena, Z.R.2    Martinez, T.M.C.3
  • 14
    • 2442472178 scopus 로고    scopus 로고
    • High quality, melt-grown ZnO single crystals
    • Reynolds D C, Litton C W, Look D C, et al. High quality, melt-grown ZnO single crystals[J]. J. Appl. Phys., 2004, 95: 4802.
    • (2004) J. Appl. Phys. , vol.95 , pp. 4802
    • Reynolds, D.C.1    Litton, C.W.2    Look, D.C.3
  • 16
    • 0347134695 scopus 로고    scopus 로고
    • Electrical and optical properties of defects and impurities in ZnO
    • Look D C, Coskun C, Claflin B, et al. Electrical and optical properties of defects and impurities in ZnO[J]. Physica B, 2003, 340-342: 32.
    • (2003) Physica B , vol.340-342 , pp. 32
    • Look, D.C.1    Coskun, C.2    Claflin, B.3
  • 17
    • 0017007668 scopus 로고
    • Band-edge emission in ZnO
    • Tomsig E, Helbig R. Band-edge emission in ZnO[J]. J. Lumin., 1976, 14: 403.
    • (1976) J. Lumin. , vol.14 , pp. 403
    • Tomsig, E.1    Helbig, R.2
  • 18
    • 0019658081 scopus 로고
    • Vibronic structure of the green photoluminescence due to copper impurities in ZnO
    • Kuhnert R, Helbig R. Vibronic structure of the green photoluminescence due to copper impurities in ZnO[J]. J. Lumin., 1981, 26: 203.
    • (1981) J. Lumin. , vol.26 , pp. 203
    • Kuhnert, R.1    Helbig, R.2
  • 19
    • 0035672010 scopus 로고    scopus 로고
    • Donor-acceptor pair transitions in ZnO substrate material
    • Thonke K, Gruber Th, Teofilov N, et al. Donor-acceptor pair transitions in ZnO substrate material[J]. Physica B, 2001, 308-310: 945.
    • (2001) Physica B , vol.308-310 , pp. 945
    • Thonke, K.1    Gruber, Th.2    Teofilov, N.3
  • 20


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.