Design of superjunction power MOSFET devices using the gradient oxide-bypassed structure

Proceedings of the International Conference on Power Electronics and Drive Systems

Volumn 1, Issue , 2005, Pages 676-680

  Chen, Yu ^a   Liang, Yung C ^a   Samudra, Ganesh S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Gradient oxide bypassed; Oxide bypassed; Power MOSFET devices; Superjunction

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC RESISTANCE; OXIDES; SILICON;

CLOSED FORM DERIVATIONS; GRADIENT OXIDE BYPASSED STRUCTURE; NUMERICAL DEVICE SIMULATOR; STATE RESISTANCE; SUPERJUNCTION;

MOSFET DEVICES;

EID: 33847354775     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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