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Volumn 70, Issue 4, 2004, Pages

Scanning tunneling spectroscopy on organic semiconductors: Experiment and model

Author keywords

[No Author keywords available]

Indexed keywords

ORGANIC COMPOUND; POLYMER;

EID: 37649029996     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.045202     Document Type: Article
Times cited : (36)

References (85)
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    • (2001) Conjugated Polymers and Molecular Interfaces, Science and Technology and Optoelectronic Applications , pp. 473
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    • Arkhipov, V.I.1    Wolf, U.2    Bässler, H.3
  • 23
    • 33646659423 scopus 로고    scopus 로고
    • note
    • bulk decreases when going from tip to sample. In addition, the contribution of the tunneling current to the space charge is ignored because compared with the transition time associated with the drift process, the tunneling time is negligible.
  • 26
    • 33646670257 scopus 로고    scopus 로고
    • L. Louwet, D. J. Vanderzande, and J. M. Gelan, Macromolecules 28, 1330 (1998); D. J. Vanderzande, A. C. Issaris, M. J. van der Borght, A. J. van Breemen, M. M. de Kok, and J. M. Gelan, Macromol. Symp. 125, 189 (1997); A. C. Issaris, D. J. Vanderzande, and J. M. Gelan, Polymer 38, 2571 (1997).
    • (1998) Macromolecules , vol.28 , pp. 1330
    • Louwet, L.1    Vanderzande, D.J.2    Gelan, J.M.3
  • 28
    • 0031141163 scopus 로고    scopus 로고
    • L. Louwet, D. J. Vanderzande, and J. M. Gelan, Macromolecules 28, 1330 (1998); D. J. Vanderzande, A. C. Issaris, M. J. van der Borght, A. J. van Breemen, M. M. de Kok, and J. M. Gelan, Macromol. Symp. 125, 189 (1997); A. C. Issaris, D. J. Vanderzande, and J. M. Gelan, Polymer 38, 2571 (1997).
    • (1997) Polymer , vol.38 , pp. 2571
    • Issaris, A.C.1    Vanderzande, D.J.2    Gelan, J.M.3
  • 33
    • 33646667831 scopus 로고    scopus 로고
    • note
    • On actual organic light-emitting devices using these types of films as an active layer, no measurable degradation of the operation characteristics is observed for exposure times in this range. Therefore, strong, progressive contamination due to the exposure to ambient conditions can be excluded. However, a slight adsorption of extraneous adsorbates cannot be fully excluded.
  • 34
    • 33646665350 scopus 로고    scopus 로고
    • note
    • NN (2.2 nm instead of 2.4 nm) was used to account for the smaller unit-cell size of pure PPV compared with the substituted PPV of Ref. 19. Note that the calculated curves in Figs. 3 and 5 are extremely insensitive to the values of μ and γ as the transport is entirely injection limited. The numerical values used in the calculations were those used for MDMO-PPV (as given in Figs. 7 and 8, and their captions).
  • 35
    • 33646650579 scopus 로고    scopus 로고
    • note
    • In the fitting procedure, the tip shape was kept fixed while the gap and the alignment were varied freely. If no satisfactory fit could be obtained, the procedure was repeated with a different tip shape.
  • 36
    • 33646640424 scopus 로고    scopus 로고
    • note
    • The problem may appear overdetermined in the case of injection-limited structures, but the high-bias slopes depend oh the tip shape as well. As such, the reproduction of both slopes by only adjusting the distribution of the single-particle gap over the electron and hole barriers at the tip forms a qualitative confirmation of the tip shape assumed.
  • 42
    • 33646649485 scopus 로고    scopus 로고
    • note
    • During z-V measurements, the actual current is monitored to verify the correct operation of the feedback system. For the measurements in Fig. 7, the injected current was found to exceed the preset value at large negative biases.
  • 44
    • 0035099769 scopus 로고    scopus 로고
    • R. Rinaldi, R. Cingolani, K. M. Jones, A. A. Baski, H. Morkoc, A. Di Carlo, J. Widany, F. Della Sala, and P. Lugli, Phys. Rev. B 63, 075311 (2001); Appl. Phys. Lett. 82, 70 (2003).
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 70
  • 54
    • 33646651720 scopus 로고    scopus 로고
    • Doctoral Dissertation, Univ. of Groningen, The Netherlands, September
    • S. C. Veenstra, Doctoral Dissertation, Univ. of Groningen, The Netherlands, September 2002; www.ub.rug.nl/eldoc/dis/science/s.c.veenstra/ titlecon.pdf
    • (2002)
    • Veenstra, S.C.1
  • 83
    • 33646666489 scopus 로고    scopus 로고
    • note
    • r (=12.9 for GaAs and 11.7 for Si), larger in the gap than at the semiconductor surface. The dielectric constant of organic semiconductors is around 2-3.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.