Electron and hole focusing in CoSi2/Si(111) observed by ballistic electron emission microscopy

Physical Review Letters

Volumn 85, Issue 7, 2000, Pages 1520-1523

  Meyer, T ^a   Migas, D ^b   Miglio, L ^b   Von Kanel H ^a  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COBALT COMPOUNDS; ELECTRON MICROSCOPY; HOT CARRIERS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; METALLIC FILMS; POINT DEFECTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS;

BALLISTIC ELECTRON EMISSION MICROSCOPY; COBALT SILICIDE; FREE ELECTRON MODEL; HOT ELECTRON PROPAGATION;

ELECTRON TRANSPORT PROPERTIES;

EID: 0034246003     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.1520     Document Type: Article

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