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Physica Status Solidi (A) Applied Research

Volumn 190, Issue 1, 2002, Pages 43-51

Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD

(6) Losurdo, M a Capezzuto, P a Bruno, G a Namkoong, G b Doolittle, W A b Brown, A S b

a CNR (Italy)

b GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE FILMS;

ANNEALING; ELECTRON SPECTROSCOPY; ELLIPSOMETRY; FILM GROWTH; GALLIUM NITRIDE; INTERFEROMETRY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PLASMAS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE;

SEMICONDUCTING FILMS;

EID: 37649007513 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200203)190:1<43::AID-PSSA43>3.0.CO;2-G Document Type: Conference Paper

Times cited : (5)

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