Preparation and observation of an artifact-free Ge2Sb 2Te5 TEM specimen by the small angle cleavage technique

Materials Characterization

Volumn 56, Issue 3, 2006, Pages 245-249

  Kim, M S ^a   Kim, H G ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Ge2Sb2Te5; Phase change memory; PRAM; SACT; TEM

Indexed keywords

AMORPHOUS MATERIALS; COMMINUTION; CRYSTALLIZATION; IRRADIATION; NONVOLATILE STORAGE; PULSED LASER DEPOSITION;

GE2SB2TE5; PHASE CHANGE MEMORY; SACT;

GERMANIUM ALLOYS;

EID: 33644778523     PISSN: 10445803     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchar.2005.11.020     Document Type: Article

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