Performance comparisons between Cu/Low-κ, carbon-nanotube, and optics for future on-chip interconnects

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 122-124

  Cho, Hoyeol ^a   Koo, Kyung Hoae ^b   Kapur, Pawan ^b   Saraswat, Krishna C ^b  

^a SUN MICROSYSTEMS   (United States)

^b Stanford University   (United States)

Author keywords

Bisectional bandwidth; Carbon nanotube; Copper resistivity; Energy per bit; Latency; Optical interconnect; Power

Indexed keywords

BANDWIDTH; ENERGY DISSIPATION; INTEGRATED CIRCUITS; NANOWIRES; OPTICAL INTERCONNECTS;

BISECTIONAL BANDWIDTH; COPPER RESISTIVITY; ENERGY PER BIT; ON-CHIP INTERCONNECTS;

CARBON NANOTUBES;

EID: 37549007553     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.911617     Document Type: Article

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