Effect of interfacial strain on the formation of AlGaN nanostructures by selective area heteroepitaxy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 3, 2008, Pages 478-483

  Jindal, Vibhu ^a   Grandusky, James ^a   Jamil, Muhammad ^a   Tripathi, Neeraj ^a   Thiel, Bradley ^a   Shahedipour Sandvik, Fatemeh ^a   Balch, Joleyn ^b   LeBoeuf, Steven ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

AlGaN; MOCVD; Nanostructures; SAG

Indexed keywords

ALUMINUM COMPOUNDS; DIFFUSION; EPITAXIAL GROWTH; SEMICONDUCTOR QUANTUM WELLS; SURFACE CHEMISTRY;

INTERFACIAL STRAIN; SELECTIVE AREA HETEROEPITAXY;

NANOSTRUCTURES;

EID: 37349108170     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.07.026     Document Type: Article

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