The study of structural, optical, and magnetic properties of undoped and p-type GaN implanted with Mn+ (10 at.%)

Materials Science and Engineering: B

Volumn 146, Issue 1-3, 2008, Pages 196-199

  Shon, Yoon ^a   Lee, Sejoon ^a   Jeon, H C ^a   Park, C S ^a   Kang, T W ^a   Kim, J S ^b   Kim, E K ^b   Yoon, Chong S ^b   Kim, Yongmin ^c  

^a Dongguk University   (South Korea)

^b Hanyang University   (South Korea)

^c Dankook University   (South Korea)

Author keywords

DMS; MBE; Mg codoping; Mn+ implanted GaMnN; MOCVD

Indexed keywords

CHEMICAL ACTIVATION; DOPING (ADDITIVES); ION IMPLANTATION; MAGNETIC PROPERTIES; MOLECULAR STRUCTURE; OPTICAL PROPERTIES;

CRYSTALLINE PHASES; FERROMAGNETIC INTERACTION RATES; MG-CODOPING; TRANSITION POINTS;

GALLIUM NITRIDE;

EID: 37349013509     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.07.011     Document Type: Article

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