Origin of the hole current in n-type high-k/metal gate stacks field effect transistor in an inversion state

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 41-44, 2007, Pages

  Sato, Motoyuki ^a,b   Yamabe, Kikuo ^b   Aoyama, Takayuki ^a   Nara, Yasuo ^a   Ohji, Yuzuru ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Carrier separation; HfSiON; Metal gate; Valence electron

Indexed keywords

GATE DIELECTRICS; HOLE CONCENTRATION; IMPACT IONIZATION; OHMIC CONTACTS; PLASMONS;

CARRIER SEPARATION; INVERSION STATES; METAL GATE STACKS; METAL GATES; PLASMON EMISSIONS; VALENCE ELECTRONS;

MOS DEVICES;

EID: 37249091996     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L1058     Document Type: Article

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