Effect of annealing temperature on electrical properties of ferroelectric Bi3.25La0.75Ti3O12 capacitors

Chinese Physics Letters

Volumn 24, Issue 12, 2007, Pages 3559-3562

  Yan, Zheng ^a   Zhang, Wei Tao ^a   Wang, Yi ^b   Zhang, Xin ^a   Li, Li ^a   Zhao, Qing Xun ^a   Du, Jun ^b   Liu, Bao Ting ^a  

^a HEBEI UNIVERSITY   (China)

^b GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; ELECTRIC BREAKDOWN; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; SILICON WAFERS; SOL-GEL PROCESS; SOL-GELS; THIN FILMS; TITANIUM COMPOUNDS;

ANNEALING TEMPERATURES; BISMUTH TITANATE; BLT FILMS; BLT THIN FILMS; COERCIVE FIELD; EFFECT OF ANNEALING; PULSEWIDTHS; PULSWIDTHS; SI WAFER; SOL- GEL METHODS;

POLARIZATION;

EID: 37249080601     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/12/073     Document Type: Article

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