Retention properties of fully integrated (Bi,La)4 Ti3 O12 capacitors and their lateral size effects

Applied Physics Letters

Volumn 86, Issue 2, 2005, Pages

  Kim, D J ^a   Jo, J Y ^a   So, Y W ^a   Kang, B S ^a,e   Noh, T W ^a   Yoon, Jong Gul ^b   Song, T K ^c   Noh, K H ^d   Lee, S S ^d   Oh, S H ^d   Lee, K N ^d   Hong, S K ^d   Park, Y J ^d  

^a Seoul National University   (South Korea)

^b Suwon University   (South Korea)

^c Changwon National University   (South Korea)

^d Hynix Semiconductor Inc   (South Korea)

^e LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAKING PROCESSES; OXYGEN IONS; RETENTION LOSSES; THERMAL ANNEALING;

ELECTRODES; FERROELECTRIC DEVICES; FERROELECTRICITY; IONS; OXYGEN; POLARIZATION; RAPID THERMAL ANNEALING; TEMPERATURE DISTRIBUTION; THIN FILMS;

CAPACITORS;

EID: 19744383140     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1843285     Document Type: Article

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