A single-event-hardened phase-locked loop fabricated in 130 nm CMOS

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2012-2020

  Loveless, T D ^a,b   Massengill, L W ^a,b   Bhuva, B L ^a,b   Holman, W T ^a,b   Reed, R A ^a,b   McMorrow, D ^a,c   Melinger, J S ^c   Jenkins, P ^c  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Charge pumps; Mixed analog digital integrated circuits; Phase locked loops (PLLs); Radiation effects; Radiation hardening; Radiation hardened by design (RHBD); RF operation; Single event effects (SEEs); Single event transients (SETs)

Indexed keywords

CHARGE PUMP; MIXED ANALOG-DIGITAL INTEGRATED CIRCUITS; RADIATION-HARDENED-BY-DESIGN (RHBD); SINGLE-EVENT EFFECTS (SEE); SINGLE-EVENT TRANSIENTS (SET);

ABSORPTION; ANALOG CIRCUITS; CHARACTERIZATION; ERROR ANALYSIS; OSCILLATORS (ELECTRONIC); PHOTONS; RADIATION EFFECTS; RADIATION HARDENING;

PHASE LOCKED LOOPS;

EID: 37249044746     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.908166     Document Type: Conference Paper

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