Effects of technology scaling on the SET sensitivity of RF CMOS voltage-controlled oscillators

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2426-2432

  Boulghassoul, Y ^a,b   Massengill, L W ^a,b   Sternberg, A L ^a,b   Bhuva, B L ^a,b  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

Analog single event transients; Circuit hardening; RF operation; Technology scaling; Voltage controlled oscillator (VCO)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC NETWORK TOPOLOGY; INTEGRATED CIRCUIT LAYOUT; RADIATION HARDENING;

ANALOG SINGLE-EVENT TRANSIENTS; CIRCUIT HARDENING; RF OPERATION; TECHNOLOGY SCALING; VOLTAGE-CONTROLLED OSCILLATOR (VCO);

VARIABLE FREQUENCY OSCILLATORS;

EID: 33144469689     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860739     Document Type: Conference Paper

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