Ferroelectric properties and leakage current mechanisms of Bi3.25La0.75Ti3O12 thin films with a-axis preferred orientation prepared by sol-gel method

Materials Letters

Volumn 62, Issue 4-5, 2008, Pages 629-632

  Kao, M C ^a   Chen, H Z ^a   Young, S L ^a  

^a HSIUPING INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Bismuth titanate; Ferroelectric; Leakage current mechanism; Rapid thermal processing; Sol gel; Thin film

Indexed keywords

BISMUTH COMPOUNDS; CRYSTALLINE MATERIALS; FERROELECTRICITY; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; REMANENCE; SILICA; SOL-GEL PROCESS; TITANIUM COMPOUNDS;

BISMUTH TITANATE; FATIGUE-FREE BEHAVIOR; SWITCHING CYCLES;

THIN FILMS;

EID: 37249016871     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2007.06.023     Document Type: Article

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