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Thin Solid Films

Volumn 471, Issue 1-2, 2005, Pages 113-117

Effects of oxygen partial pressure and ion doping on the ferroelectricity and microstructures of sputter-deposited Bi3.25La 0.75Ti3O12 films

(4) Lin, Wen Tai a Fan, Chun Wei a Yu, Hsiao Hsuan a Wu, Che Sung a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

Ferroelectric properties; Ion doping; Oxides; Sputtering

Indexed keywords

DEGRADATION; DOPING (ADDITIVES); FERROELECTRICITY; GRAIN SIZE AND SHAPE; IONS; MICROSTRUCTURE; OXIDES; OXYGEN; PARTIAL PRESSURE; SPUTTER DEPOSITION;

DOPANT CONCENTRATION; FERROELECTRIC PROPERTIES; HIGHER-VALENT CATIONS; ION DOPING;

BISMUTH COMPOUNDS;

EID: 10644239266 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.04.062 Document Type: Article

Times cited : (8)

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