Observation of individual dislocations in 6H and 4H SiC by means of back-reflection methods of X-ray diffraction topography

Crystal Research and Technology

Volumn 42, Issue 12, 2007, Pages 1359-1363

  Wierzchowski, W ^a   Wieteska, K ^b   Balcer, T ^a   Malinowska, A ^a,c   Graeff, W ^d   Hofman, W ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF ATOMIC ENERGY   (Poland)

^c WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^d DESY   (Germany)

Author keywords

Dislocations; Silicon carbide; X ray diffraction topography

Indexed keywords

COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); SYNCHROTRONS; TOPOGRAPHY; X RAY DIFFRACTION ANALYSIS;

BRAGG-CASE GEOMETRY; MONOCHROMATIC BEAM TOPOGRAPHY; NUMERICALLY SIMULATED IMAGES;

SILICON CARBIDE;

EID: 37149013835     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200711032     Document Type: Conference Paper

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