Structural defects in SiC ingots investigated by synchrotron diffraction imaging

Journal of Physics D: Applied Physics

Volumn 34, Issue 10 SPEC. ISS. A, 2001, Pages

  Pernot, E ^a   Pernot Rejmankova P ^a,b   Anikin, M ^a   Pelissier, B ^a   Moulin, C ^c   Madar, R ^a  

^a CNRS   (France)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DEFECTS; IMAGING TECHNIQUES; SILICON CARBIDE; SILICON WAFERS;

SYNCHROTRON DIFFRACTION IMAGING;

INGOTS;

EID: 0035927063     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/10a/328     Document Type: Article

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