The spatial distribution of defects and its dependence on seed polarity and off-orientation during growth of 4H - SiC single crystals

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 9-14

  Rost, H J ^a   Schmidbauer, M ^a   Siche, D ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Bulk growth; Defect distribution; Orientation dependency; Polarity

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; ETCHING; OPTICAL MICROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS;

BULK GROWTH; DEFECT DISTRIBUTION; MICROPIPE DENSITY; ORIENTATION DEPENDENCY; SEED POLARITY;

CRYSTAL DEFECTS;

EID: 37149009439     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.9     Document Type: Conference Paper

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