Effect of nitrogen doping on the formation of planar defects in 4H-SiC

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 39-42

  Siehe, D ^a   Albrecht, M ^a   Doerschel, J ^a   Irmscher, K ^a   Rost, H J ^a   Rossberg M ^a   Schulz, D ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

4H SiC; Nitrogen doping; Planar defects; Single crystal growth

Indexed keywords

LUMINESCENCE; NITROGEN; NUCLEATION; SILICON CARBIDE; SINGLE CRYSTALS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

NITROGEN DOPING; PLANAR DEFECTS; SINGLE CRYSTAL GROWTH; UNITCELL HEIGHT;

CRYSTAL GROWTH;

EID: 35148821931     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (6)

1. H.-J. Rost, J. Doerschel, K. Irmscher, D. Schulz and D. Siehe: J. Crystal Growth Vol. 257, (2003), p. 75
2. B.J. Skromme, K. Palle, C.D. Poweleit, L.R. Bryant, W.M. Vetter, M. Dudley, K. Moore and T. Gehoski: Mater. Sci. Forum Vol. 389-393, (2002), p. 455
3. J.Q. Liu, H.J. Chung, T. Kuhr, Q. Li and M. Skowronski: Appl. Phys. Lett. Vol. 80, (2002), p. 2111
4. K. Irmscher, J. Doerschel, H.-J. Rost, D. Schulz, D. Siehe, M. Nerding and H.P. Strunk: Eur. Phys. J. Appl. Phys., in press
5. D. Schulz, M. Lechner, H.-J. Rost, D. Siche and J. Wollweber: Mater. Sci. Forum Vol. 433-436 (2003) p. 17
6. H.-J. Rost, D. Schulz and D. Siche: in Silicon Carbide Recent Major Advances, ed. by W. J. Choyke, H. Matsunami and G. Pensl, Springer Verlag, 2004, pp. 163-176