Temperature dependence of sublimation growth of 6H-SiC on (112̄0) substrates

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 119-122

  Nishiguchi, Taro ^a   Masuda, Yasuichi ^a   Ohshima, Satoru ^a   Nishino, Shigehiro ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

(112 0) Plane; Growth model; Growth temperature; Sublimation growth; Two step growth

Indexed keywords

COALESCENCE; CRYSTAL GROWTH; NUCLEATION; SILICON CARBIDE; SUBLIMATION; TWO DIMENSIONAL; GROWTH TEMPERATURE; TEMPERATURE DISTRIBUTION;

GROWTH MODELS; KINK DENSITY; SUBLIMATION GROWTH; SURFACE FLATNESS; TWO-STEP GROWTH; (1120) PLANE; GROWTH MODELING; NUCLEATION DENSITIES; OPTIMUM GROWTH CONDITIONS; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL GROWTH;

SUBSTRATES;

EID: 8744286032     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.119     Document Type: Article

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