Impact of channel dangling bonds on reliability characteristics of Flash memory on poly-Si thin films

IEEE Electron Device Letters

Volumn 28, Issue 4, 2007, Pages 267-269

  Lin, Yu Hsien ^a   Chien, Chao Hsin ^a,b   Chou, Tung Huan ^a   Chao, Tien Sheng ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Dangling bonds; Flash memories; Polycrystalline silicon thin film transistor (poly si tft); PolySi oxide nitride oxide silicon (sonos) type memories

Indexed keywords

CHARGE STORAGE; DEFECT PASSIVATION; OXIDE NITRIDE OXIDES; PLASMA TREATMENT; POLY-SI; POLY-SI THIN FILM; POLYCRYSTALLINE; RELIABILITY CHARACTERISTICS; SILICON THIN FILM; SINGLE CRYSTALLINE SUBSTRATES; THIN-FILM TRANSISTOR (TFTS);

DANGLING BONDS; GRAIN BOUNDARIES; NITRIDES; OXIDE FILMS; PASSIVATION; PLASMA APPLICATIONS; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; FLASH MEMORY;

FLASH MEMORY; DANGLING BONDS;

EID: 37149003771     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.891789     Document Type: Article

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