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Volumn 45, Issue 10 A, 2006, Pages 7685-7687

Thermal and electrical properties of high-quality freestanding GaN wafers with high carrier concentration

Author keywords

Freestanding GaN; HVPE; Mobility; Resistivity; Thermal conductivity

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM NITRIDE; SEMICONDUCTOR DOPING; SILICON; THERMAL CONDUCTIVITY;

DOPING CONCENTRATION; LASER FLASH METHODS;

CRYSTALS;

EID: 34249887881 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.7685 Document Type: Article

Times cited : (36)

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