Polarities of AlN films and underlying 3C-SiC intermediate layers grown on (1 1 1) Si substrates

Journal of Crystal Growth

Volumn 310, Issue 1, 2008, Pages 96-100

  Komiyama, Jun ^a   Eriguchi, Kenichi ^b   Abe, Yoshihisa ^a   Suzuki, Shunichi ^a   Nakanishi, Hideo ^a   Yamane, Takayoshi ^b   Murakami, Hisashi ^b   Koukitu, Akinori ^b  

^a Nissei Bldg   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Crystal structure; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); HYDRIDE VAPOR PHASE EPITAXY; INTERFACIAL STRUCTURE; INTERMEDIATE LAYERS;

THIN FILMS;

EID: 36549056481     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.10.017     Document Type: Article

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