Plasma-assisted molecular-beam epitaxy of GaN on transition-metal carbide (1 1 1) surfaces

Journal of Crystal Growth

Volumn 310, Issue 1, 2008, Pages 22-25

  Aizawa, Takashi ^a   Hishita, Shunichi ^a   Otani, Shigeki ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

A1. Surface structure; A3. Molecular beam epitaxy; B1. Carbides; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SURFACE STRUCTURE; TITANIUM CARBIDE; ZIRCONIUM COMPOUNDS;

METAL LAYER TERMINATION;

GALLIUM NITRIDE;

EID: 36549049785     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.09.042     Document Type: Article

References (24)

1. Jain S.C., Willander M., Narayan J., and Overstraeten R.V. J. Appl. Phys. 87 (2000) 965
2. Akasaki I., Amano H., Koide Y., Hiramatsu K., and Sawaki N. J. Crystal Growth 98 (1989) 209
3. Nakamura S. Jap. J. Appl. Phys. 30 (1991) L1705
4. Nam O.-H., Bremser M.D., Zheleva T.S., and Davis R.F. Appl. Phys. Lett. 71 (1997) 2638
5. Toth L.E. Transition Metal Carbides and Nitrides (1971), Academic Press, New York, London
6. Johansson L.I. Surf. Sci. Rep. 21 (1995) 177
7. Vegard L. Z. Kristallogr. 67 (1928) 239
8. J.A. Freitas Jr, L.B. Rowland, J. Kim, M. Fatemi, Appl. Phys. Lett. 90 (2007) 091910.
9. Otani S., Honma S., Tanaka T., and Ishizawa Y. J. Crystal Growth 61 (1983) 1
10. Otani S., Tanaka T., and Hara A. J. Crystal Growth 51 (1981) 164
11. Otani S., Tanaka T., and Ishizawa Y. J. Crystal Growth 62 (1983) 211
12. Tarsa E.J., Heying B., Wu X.H., Fini P., DenBaars S.P., and Speck J.S. J. Appl. Phys. 82 (1997) 5472
13. Smith A.R., Feenstra R.M., Greve D.W., Shin M.S., Skowronski M., Neugebauer J., and Northrup J.E. Appl. Phys. Lett. 72 (1998) 2114
14. Kinoshita H., Otani S., Kamiyama S., Amano H., Akasaki I., Suda J., and Matsunami H. Jpn. J. Appl. Phys. 40 (2001) L1280
15. Suda J., and Matsunami H. J. Crystal Growth 237-239 (2002) 1114
16. Armitage R., Suda J., and Kimoto T. Phys. Stat. Sol. (c) 2 (2005) 2191
17. Yamada-Takamura Y., Wang Z.T., Fujikawa Y., Sakurai T., Xue Q.K., Tolle J., Liu P.L., Chizmeshya A.V.G., Kouvetakis J., and Tsong I.S.T. Phys. Rev. Lett. 95 (2005) 266105
18. Iwata J.-I., Shiraishi K., and Oshiyama A. Appl. Phys. Lett. 83 (2003) 2560
19. Liu P.L., Chizmeshya A.V.G., Kouvetakis J., and Tsong I.S.T. Phys. Rev. B 72 (2005) 245335
20. Aizawa T., Otani S., and Hishita S. Appl. Phys. Lett. 89 (2006) 181913
21. Aizawa T., Hayami W., and Otani S. J. Chem. Phys. 117 (2002) 11310
22. Hayami W., Souda R., Aizawa T., Otani S., and Ishizawa Y. Surf. Sci. 346 (1996) 158
23. Noda T., Yamazaki M., Ozawa K., Edamoto K., and Otani S. Surf. Sci. 450 (2000) 27
24. Ruberto C., Vojvodic A., and Lundqvist B.I. Solid State Commun. 141 (2007) 48