Properties of epitaxial GaN on refractory metal substrates

Applied Physics Letters

Volumn 90, Issue 9, 2007, Pages

  Freitas Jr , Jaime A ^a   Rowland, Larry B ^b   Kim, Jihyun ^c   Fatemi, Mohammad ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Aymont Technology Inc   (United States)

^c Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; GALLIUM NITRIDE; OHMIC CONTACTS; REFRACTORY METALS; SUBSTRATES;

EMISSION LINES; REFRACTORY METAL SUBSTRATES; SUBSTRATE OHMIC CONTACTS; WURTZITE STRUCTURE FILMS;

EPITAXIAL FILMS;

EID: 33847672639     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2709512     Document Type: Article

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