GaN:δ-Mg grown by MOVPE: Structural properties and their effect on the electronic and optical behavior

Journal of Crystal Growth

Volumn 310, Issue 1, 2008, Pages 13-21

  Li, T ^a   Simbrunner, C ^a   Wegscheider, M ^a   Navarro Quezada, A ^a   Quast, M ^a   Schmidegg, K ^a   Bonanni, A ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

A1. TEM; A3. MOVPE; B1. Mg doped GaN

Indexed keywords

ELECTRONIC PROPERTIES; MAGNESIUM; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTOR GROWTH; STRUCTURAL PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

EMISSION ENERGY; POTENTIAL FLUCTUATIONS;

GALLIUM NITRIDE;

EID: 36548999246     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.09.045     Document Type: Article

References (42)

1. Orton J.W., and Foxon C.T. Rep. Prog. Phys. 61 (1998) 1
2. Dietl T., Ohno H., Matsukura F., Cibert J., and Ferrand D. Science 287 (2000) 1019
3. Nakamura S., Iwasa N., Senoh M., and Mukai T. Jpn. J. Appl. Phys. 31 (1992) 1258
4. Amano H., Kito M., Hiramatsu K., and Akasaki I. Jpn. J. Appl. Phys. 28 (1989) L2112
5. Nakamura S., Mukai T., Senoh M., and Iwasa N. Jpn. J. Appl. Phys. 31 (1992) L139
6. Neugebauer J., and Van de Walle C.G. Mater. Res. Soc. Symp. Proc. 449 (1996) 509
7. Kaufmann U., Schlotter P., Obloh H., Köhler K., and Maier M. Phys. Rev. B 62 (2002) 10867
8. Obloh H., Bachem K.H., Kaufmann U., Kunzer M., Maier M., Ramakrishnan A., and Schlotter P. J. Crystal Growth 195 (1998) 270
9. Nazmul A.M., Sugahara S., and Tanaka M. Appl. Phys. Lett. 80 (2002) 3210
10. Schubert E.F., Kuo J.M., Kopf R.F., Luftman H.S., Hopkins L.C., and Sauer N.J. J. Appl. Phys. 67 (1990) 1969
11. Contreras O., Ponce F.A., Christen J., Dadgar A., and Krost A. Appl. Phys. Lett. 81 (2002) 4712
12. Nakarmi M.L., Kim K.H., Li J., Lin J.Y., and Jiang H.X. Appl. Phys. Lett. 82 (2003) 3041
13. Wang H., Liu J., Niu N., Shen G., and Zhang S. J. Crystal Growth 304 (2007) 7
14. Liliental-Weber Z., Benamara M., Swider W., Washburn J., Grzegory I., Porowski S., Lambert D.J.H., Eiting C.J., and Dupuis R.D. Appl. Phys. Lett. 75 (1999) 4159
15. Liliental-Weber Z., Jasinski J., Benamara M., Grzegory L., Porowski S., Lampert D.J.H., Eiting C.J., and Dupuis R.D. Phys. Status Solidi (b) 228 (2001) 345
16. Liliental-Weber Z., Benamara M., Swider W., Washburn J., Grzegory I., Porowski S., Dupuis R.D., and Eiting C.J. Physica B 273-274 (1999) 124
17. Simbrunner C., Wegscheider M., Quast M., Tian Li, Navarro-Quezada A., Sitter H., and Bonanni A. Appl. Phys. Lett. 90 (2007) 142108
18. Simbrunner C., Sitter H., and Bonanni A. J. Appl. Phys. 101 (2007) 093501
19. Simbrunner C., Schmidegg K., Kharchenko A., Bethke J., Woitek J., Lischka K., Bonanni A., and Sitter H. J. Crystal Growth 298 (2007) 243
20. Lilitental-Weber Z., Jasinski J., Benamara M., Grzegory I., Porowski S., Lampert D.J.H., Eiting C.J., and Dupuis R.D. Phys. Status Solidi (b) 228 (2001) 345
21. Vennéguès P., Benaissa M., Beaumont B., Feltin E., De Mierry P., Dalmasso S., Leroux M., and Gibart P. Appl. Phys. Lett. 77 (2000) 880
22. Benaissa M., Vennéguès P., Beaumont B., Gibart P., Saikaly W., and Charai A. Appl. Phys. Lett. 77 (2000) 2115
23. Ramachandran V., Feenstra R.M., Sarney W.L., Salamanca-Riba L., Northrup J.E., Romano L.T., and Greve D.W. Appl. Phys. Lett. 75 (1999) 808
24. Romano L.T., Northrup J.E., Ptak A.J., and Myers T.H. Appl. Phys. Lett. 77 (2000) 2479
25. Vennègués P., Benaissa M., Dalmasso S., Leroux M., Feltin E., De Mierry P., Beaumont B., Damilano B., Grandjean N., and Gibart P. Mater. Sci. Eng. B 93 (2002) 224
26. Lilitental-Weber Z., Benamara M., Washburn J., Grzegory I., and Porowski S. Phys. Rev. Lett. 83 (1999) 2370
27. Pretorius A., Schowalter M., Daneu N., Kröger R., Rečnik A., and Rosenauer A. Phys. Status Solidi (c) 3 (2006) 1803
28. Lin M.E., Xue G., Zhou G.L., Greene J.E., and Morkoc H. Appl. Phys. Lett. 63 (1993) 932
29. Guha S., Bojarczuk N.A., and Cardone F. Appl. Phys. Lett. 71 (1997) 1685
30. Hongbo Yu, Deniz Caliskan, and Ekmel Ozbay. J. Appl. Phys. 100 (2006) 033501
31. Metzger T., Höpler R., Born E., Ambacher O., Stutzmann M., Stömmer R., Schuster M., Göbel H., Christiansen S., Albrecht M., and Strunk H.P. Philos. Mag. A 77 (1998) 1013
32. Bai J., Dudley M., Sun W.H., Wang H.M., and Asif Khan M. Appl. Phys. Lett. 88 (2006) 051903
33. Cherns D., Baines M.Q., Wang Y.Q., Liu R., Ponce F.A., Amano H., and Akasaki I. Phys. Status Solidi (b) 234 (2002) 850
34. Cherns D., Wang Y.Q., Liu R., and Ponce F.A. Appl. Phys. Lett. 81 (2002) 4541
35. Lilitental-Weber Z., Sohn H., Newman N., and Washburn J. J. Vac. Sci. Technol. B 13 (1995) 1578
36. Romano L.T., and Myers T.H. Appl. Phys. Lett. 71 (1997) 3486
37. Romano L.T., Kneissl M., Northrup J.E., Van de Walle C.G., and Treat D.W. Appl. Phys. Lett. 79 (2001) 2734
38. Cho H.K., Lee J.Y., Jeon S.R., and Yang G.M. Appl. Phys. Lett. 79 (2001) 3788
39. Viswanath A.K., Shin E., Lee J.I., Yu S., Kim D., Kim B., Choi Y., and Hong C.-H. J. Appl. Phys. 83 (1998) 2272
40. Oh E., Park H., and Park Y. Appl. Phys. Lett. 72 (1998) 70
41. Myoung J.M., Shim K.H., Kim C., Gluschenkov O., Kim K., Kim S., Turnbull D.A., and Bishop S.G. Appl. Phys. Lett. 69 (1996) 2722
42. Fukushima T., Sato K., Katayama-Yoshida H., and Dederichs P.H. Jpn. J. Appl. Phys. 45 (2006) L416