Porous gold structures templated by porous silicon

Journal of the Electrochemical Society

Volumn 155, Issue 1, 2008, Pages

  Brito Neto, Joś G A ^a,b   Kondo, Kentaro ^a   Hayase, Masanori ^a,b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b ELECTROCHEMICAL SOCIETY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISPLACEMENT REACTIONS; GALVANIC DISPLACEMENT; PARALLEL PORES; POROUS GOLD STRUCTURES;

GALVANIZING; METAL IONS; METALLIZING; REACTION KINETICS; SURFACE DIFFUSION; SURFACE MORPHOLOGY; VOLTAMMETRY;

POROUS SILICON;

EID: 36448983642     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2804381     Document Type: Article

References (24)

1. C. Xu, J. Su, X. Xu, P. Liu, H. Zhao, F. Tian, and Y. Ding, J. Am. Chem. Soc., 129, 42 (2007).
2. M. C. Dixom, T. A. Daniel, M. Hieda, D. M. Smilgies, M. H. W. Chan, and D. L. Allara, Langmuir, 23, 2414 (2007).
3. R. Szamocki, A. Velichko, C. Holzapfel, F. Müklich, S. Ravaine, P. Garrigue, N. Sojic, R. Hempelmann, and A. Kuhn, Anal. Chem., 79, 533 (2007).
4. D. Deresmes, V. Marissael, D. Stievenard, and C. Ortega, Thin Solid Films, 255, 258 (1995).
5. M. dám, Zs. J. Horváth, I. Bársony, L. Szölgýmy, E. Vázsonyi, and V. Van Tuyen, Thin Solid Films, 255, 266 (1995).
6. M. Jeske, J. Shultze, M. Thönissen, and H. Münder, Thin Solid Films, 255, 63 (1995).
7. S. Dhar and S. Chakrabarti, Semicond. Sci. Technol., 11, 1231 (1996).
8. F. A. Harraz, K. Kamada, K. Kobayashi, T. Sakka, and Y. H. Ogata, J. Electrochem. Soc., 152, C213 (2005).
9. H. Lin, J. Mock, D. Smith, T. Gao, and M. J. Sailor, J. Phys. Chem. B, 108, 11654 (2004).
10. M. Hayase, T. Kawase, and T. Hatsuzawa, Electrochem. Solid-State Lett., 7, A231 (2004).
11. F. A. Harraz, J. Sasano, T. Sakka, and Y. H. Ogata, J. Electrochem. Soc., 150, C277 (2003).
12. G. D'Arrigo, C. Spinella, G. Arena, and S. Lorenti, Mater. Sci. Eng., C, 23, 13 (2003).
13. F. A. Harraz, T. Tsuboi, J. Sasano, T. Sakka, and Y. H. Ogata, J. Electrochem. Soc., 149, C456 (2002).
14. F. A. Harraz, T. Sakka, and Y. H. Ogata, Electrochim. Acta, 47, 1249 (2002).
15. T. Tsuboi, T. Sakka, and Y. H. Ogata, Appl. Surf. Sci., 147, 6 (1999).
16. I. Coulthard and T. K. Sham, Appl. Surf. Sci., 126, 287 (1998).
17. C.-H. Wang, D.-C. Sun, and X.-H. Xia, Nanotechnology, 17, 651 (2006).
18. I. Coulthard and T. K. Sham, Solid State Commun., 105, 751 (1998).
19. J. G. A. Brito-Neto, S. Araki, and M. Hayase, J. Electrochem. Soc., 153, C741 (2006).
20. X. Zhang and K.-N. Tu, J. Am. Chem. Soc., 128, 15036 (2006).
21. S. Zhu, W. Gorski, D. R. Powell, and J. A. Walmsley, Inorg. Chem., 45, 2688 (2006).
22. B. P. Block and J. C. Bailar Jr., J. Am. Chem. Soc., 73, 4722 (1951).
23. D. Hamm, J. Sasano, T. Sakka, and Y. H. Ogata, J. Electrochem. Soc., 149, C331 (2002).
24. R. B. Simpson, R. L. Evans, and H. A. Sarof, J. Am. Chem. Soc., 77, 1438 (1955).