Impact of axial strain on drain current of carbon-nanotube field-effect transistors with doped junctions

Applied Physics Letters

Volumn 91, Issue 20, 2007, Pages

  Uchida, Ken ^a   Saitoh, Masumi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; DRAIN CURRENT; ENERGY GAP; FIELD EFFECT TRANSISTORS;

AXIAL STRAIN; DOPED JUNCTIONS; OFF-CURRENT; ON-CURRENT;

SEMICONDUCTOR JUNCTIONS;

EID: 36249017801     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2813016     Document Type: Article

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