Optimization of single-gate carbon-nanotube field-effect transistors

IEEE Transactions on Nanotechnology

Volumn 4, Issue 5, 2005, Pages 533-538

  Ungersboeck, Enzo ^a,b   Pourfath, Mahdi ^a,b   Kosina, Hans ^a,b   Gehring, Andreas ^a,b,d   Cheong, Byoung Ho ^a,c   Park, Wan Jun ^a,c   Selberherr, Siegfried ^a,b,e  

^a IEEE   (Austria)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d CYPRESS SEMICONDUCTOR   (United States)

^e VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Carbon nanotubes (CNTs); Field effect transistors (FETs); Nanoelectronics; Optimization methods

Indexed keywords

ASYMMETRIC GATE CONTACTS; CONTACT THICKNESS; NANOELECTRONICS; OPTIMIZATION METHODS;

CARBON NANOTUBES; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; NANOSTRUCTURED MATERIALS; OPTIMIZATION; SCHOTTKY BARRIER DIODES;

FIELD EFFECT TRANSISTORS;

EID: 26644456693     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.851402     Document Type: Article

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