Characteristics of GaAs/AlGaAs HEMT's fabricated by X-ray lithography

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 175-178

  Lafontaine, H ^a   Haghiri Gosnet, A M ^a   Jin, Y ^a   Crozat, P ^a   Adde, R ^a   Chaker, M ^a   Pepin H ^a   Rousseaux, F ^a   Launois, H ^a  

^a INRS EMT   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON BEAM LITHOGRAPHY; FREQUENCIES; HETEROJUNCTIONS; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; TRANSCONDUCTANCE; X RAY LITHOGRAPHY;

GATE POLARIZATION; MAXIMUM OSCILLATION FREQUENCY; STATIC RANDOM ACCESS MEMORY CHIP; TWO DIMENSIONAL ELECTRON GAS; X RAY ABSORBER PATTERNS; X RAY MASK; X RAY RADIATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029770348     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477612     Document Type: Article

References (17)

1. D. Delagebeaudeuf, P. Delescluse, P. Etienne, M. Laviron, J. Chaplart and N. T. Linh, "Two-dimensional electron gas MRSFRT structure." Electron. Lett., vol. 16, p. 667, 1980.
2. T. Mimura, S. Hiyamizu, T. Fujii and K. Narabu, "A new field-effect transistor will] selectively doped GaAs/n-AlGaAs heterojuriclions," Jpn. J. Appl. Phys., vol. 19, p. L225, 1980.
3. L. D. Nguyen, A. S. Brown, M. A. Thompson and L. M. Jelloin, "50-nm self-aligned-gate pseudomorphic AlInAs/GalnAs high electron mobility transistors," IEEE Trans. Electron Devices, vol. 39, no 9, pp. 2007-2014, 1992.
4. P. Ho, M. Y. Kao, P. C. Chao, K. H. G. Duh, J. M. Ballingall, S. T. Alien, A. J. Tessmer and P. M. Smith, "Extremely high gain 0.15 /jm gate-length InAlAs/InGaAs/InP HEMT's," Electron. Lett., vol. 27, p. 325, 1991.
5. U. L. Spears and H. I. Smith, "High resolution pattern replication using soft X-ray," Electron. Lett. vol. 8, no. 4, p. 102, 1972.
6. [61 M. C. Peckerar and J. R. Maldonado, "X-ray lithographhy-an overview," Proc. IEEE, 1993, vol. 81, no. 9.
7. L. G. Studebaker, " Sub-0.2 micron gate lithography using E-beam, Xray and optical technologies-An overview," IEEE GaAs 1C Symfi., 16ih 'rech. Dig., Philadelphia, PA, p. 321, 1994
8. (8] R. Viswauathan, A. Bright, D. Se
9. I. Y. Yang, H. Hu, L. T. Su, V. V. Wong, M. Burkhardt, E. E. Moon, J. M. Carter, D. A. Antoniadis, H. !. Smith, K. W. Rhee and W. Chu, "High performance self-aligned sub-100 nm metal-oxide semiconductor field-effect transistors using X-ray lithography," J. Vac. Sci. Technol., vol. B12, no. 6, p. 4051, 1994.
10. A. M. Haghiri-Gosnet, H. Lafontaine, Y. Jin, F. Rousseaux, M. Chaker, H. Pépin anil H. Launois, "Fabrication of 150-nm gate-length high electron mobility transistors using x-ray lithography," J. Vac. Sci. Technol., vol. B12, no. 6, p. 3970, 1994.
11. Y. Jin, B. Etienne, F. Pardo, G. Gaini and H. Launois, "High transconductance Alo.aGao.7As/GaAs MODFBT's," Microelect. Eng., vol. U, pp. 113-116, 1990.
12. Y. Chen, R. Kupka, F. Rousseaux, F. Carcenac, D. Decanini, M. F. Ravet and H. Launois, "50-mn X-ray lithography using synchrotron radiation," J. Vac. Sei, Technol., vol. B.12, no. 6, p. 3959, 1994.
13. A. M. Haghiri-Gosnet, F. Rousseaux, B. Kebabi, F. R. Ladan, C. Mayeux, A. Madouri, D. Decanini, I. Bourneix, F. Carcenac, H. Launois, B. Wisniewski and E. Gat, J. Vac. Sci. Technol., vol. B8, 1565, 1990.
14. L. Blum, M. E. Perkins and H. Y. Liu. / Vac. Sci. Technol, vol. B6, p. 2280, 1988.
15. K. Deguchi, K. Kondo, H. Nomura and Y. Gomei, Jpn, J. Appl. Phys. vol. 31, p. 2954, 1992.
16. Y. Jin-Delorme, A. De Lustrac, P. Crozat, K. Yazbek, R. Adde, G. Vemet, Y. Jin, B. Etienne and H. Launois, "Electrical parameter evolutions against gate length and bias in ultrashort gate AlGaAs/GaAs HEMT's," Electron. Leu., vol. 29, p. 642, 1993.
17. Y. Jin, B. Etienne, E. Delos, E. Constant and H. Launois, "Comparison of double and single recessed 0.15 /tm gate length 6 doped AlGaAs/GaAs TEGFETs," Microelect Eng. vol. 13, pp. 381-384, 1991.