Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate: Part II. Application to InxGa1-xAs/InP system

International Journal of Solids and Structures

Volumn 45, Issue 3-4, 2008, Pages 746-756

  Lee, Saebom ^a   Choi, Seung T ^b   Earmme, Youn Y ^c  

^a SAMSUNG Electronics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Anisotropic elasticity; Channeling crack; Critical condition for crack formation; Epitaxial film substrate system; Periodic array of channeling cracks

Indexed keywords

CRACK INITIATION; DISLOCATIONS (CRYSTALS); ENERGY RELEASE RATE; FILM THICKNESS; STRESSES; SUBSTRATES; TENSILE STRAIN;

ANISOTROPIC ELASTICITY; CHANNELING CRACKS; CONTINUOUS DISTRIBUTION; PERIODIC ARRAYS;

EPITAXIAL FILMS;

EID: 36148976805     PISSN: 00207683     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijsolstr.2007.08.037     Document Type: Article

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