Capacitance transient study of the deep Fe acceptor in indium phosphide

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 16, 1997, Pages 10241-10248

  Dadgar, A ^a   Engelhardt, R ^a   Kuttler, M ^a   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000715014     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.10241     Document Type: Article

References (31)

1. S. G. Bishop, in Deep Centers in Semiconductors, edited by S. Pantelides (Gordon and Breach, New York, 1986).
2. A. Juhl, A. Hoffmann, D. Bimberg, and H. J. Schulz, Appl. Phys. Lett. 50, 1292 (1987).
3. P. R. Tapster, M. S. Skolnick, R. G. Humphreys, P. J. Dean, B. Cockayne, and W. R. MacEwan, J. Phys. C 14, 5069 (1981).
4. G. Bremond, A. Nouailhat, G. Guillot, and B. Cockayne, Electron. Lett. 17, 55 (1991).
5. M. Sugawara, M. Kondo, T. Takanohashi, and K. Nakajima, Appl. Phys. Lett. 51, 824 (1987).
6. Tsuginori Takanohashi, Kenja Nakai, and Kazuo Nakajima, Jpn. J. Appl. Phys. 27, L113 (1988).
7. K. Korona, K. Karpinska, A. Babinski, and A. M. Hennel, Acta Phys. Pol. 77, 71 (1990).
8. P. B. Klein, J. E. Furneaux, and R. L. Henry, Phys. Rev. B 29, 1947 (1984).
9. D. C. Look, Phys. Rev. B 20, 4160 (1979).
10. K. Turki, G. Piccoli, and J. E. Viallet, J. Appl. Phys. 73, 8340 (1993).
11. H. Lefevre and M. Schulz, Appl. Phys. 12, 45 (1977).
12. T. Wolf, T. Zinke, A. Krost, H. Scheffler, H. Ullrich, D. Bimberg, and P. Harde, J. Appl. Phys. 75, 3870 (1994).
13. M. Lax, Phys. Rev. 119, 1502 (1960).
14. P. A. Martin, B. G. Streetman, and K. Hess, J. Appl. Phys. 52, 7409 (1981).
15. A. F. Tasch, Jr. and C. T. Sah, Phys. Rev. B 1, 800 (1970).
16. S. Makram-Ebeid and M. Lannoo, Phys. Rev. B 25, 6406 (1982).
17. A. Dadgar, L. Köhne, M. Zafar Iqbal, and D. Bimberg, in Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 2837.
18. N. Baber, H. G. Grimmeis, M. Klevermann, P. Omling, and M. Zafar Iqbal, J. Appl. Phys. 62, 2853 (1987).
19. C. H. Henry and D. V. Lang, Phys. Rev. B 15, 989 (1977).
20. R. Williams, J. Appl. Phys. 37, 3411 (1966).
21. V. Ya. Prinz and B. A. Bobylev, Fiz. Tekh. Poluprovodn. l4, 1893 (1980) [Sov. Phys. Semicond. 14, 1097 (1980)].
22. V. Ya. Prinz and S. N. Rechkunov, Phys. Status Solidi B 118, 159 (1983).
23. H. Scheffler, N. Baber, A. Dadgar, T. Wolf, and D. Bimberg (unpublished).
24. G. Bremond, A. Nouailhat, G. Guillot, and B. Cockayne, Solid State Commun. 41, 477 (1982).
25. S. Fung, R. J. Nicholas, and R. A. Stradling, J. Phys. C 12, 5145 (1979).
26. T. Takanohashi and K. Nakajima, J. Appl. Phys. 65, 3933 (1989).
27. S. H. Koenig, Phys. Rev. 110, 986 (1958).
28. K. D. Glinchuk and N. M. Litovchenko, Poluprovodn. Tekh. Mikroelekton. 28, 3 (1978).
29. G. M. Martin, A. Mitonneau, D. Pons, A. Mircea, and D. W. Woodard, J. Phys. C 13, 3855 (1980).
30. V. N. Abakumov, V. Karpus, V. I. Perel, and I. N. Yassievich, Fiz. Tekh. Poluprovodn. 22, 262 (1988). [Sov. Phys. Semicond. 22, 159 (1988)].
31. D. Söderström, S. Marcinkevićius, S. Karlsson, and S. Lourdudoss, Appl. Phys. Lett. 70, 3374 (1997).