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IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 470-472

4 kV 4H-SiC epitaxial emitter bipolar junction transistors

(5) Balachandran, Santhosh a Chow, T P a Agarwal, A b Scozzie, C c Jones, K A c

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b Arkansas Power Electronics International Inc (United States)

c U S ARMY RESEARCH LABORATORY (United States)

Author keywords

4H SiC; Bipolar junction transistor (BJT); Emitter contact resistance; Power semiconductor devices

Indexed keywords

ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; ION IMPLANTATION; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

BIPOLAR JUNCTION TRANSISTORS (BJT); COMMON-EMITTER CURRENT GAIN; DEVICE FORWARD CONDUCTION CHARACTERISTICS; EMITTER CONTACT RESISTANCE; OPEN BASE BLOCKING VOLTAGE; POWER SEMICONDUCTOR DEVICES;

BIPOLAR TRANSISTORS;

EID: 22944483775 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/LED.2005.851174 Document Type: Article

Times cited : (20)

References (7)

1
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2
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- Mar
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- Ryu, S.H.¹ Agarwal, A.² Palmour, J.W.³

3
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4
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- A. K. Agarwal, S. H. Ryu, J. Richmond, C. Capell, J. W. Palmour, Y. Tang, S. Balachandran, and T. P. Chow, "Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiC," in Proc. Int. Symp. Power Semiconductor Devices and IC, 2003, pp. 135-138.
- (2003) Proc. Int. Symp. Power Semiconductor Devices and IC , pp. 135-138
- Agarwal, A.K.¹ Ryu, S.H.² Richmond, J.³ Capell, C.⁴ Palmour, J.W.⁵ Tang, Y.⁶ Balachandran, S.⁷ Chow, T.P.⁸

5
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- "SiC power bipolar transistors and thyristors"
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- T. P. Chow, N. Ramungul, J. Fedison, and Y. Tang, "SiC power bipolar transistors and thyristors," in Silicon Carbide Recent Advances. New York: Springer, 2003.
- (2003) Silicon Carbide Recent Advances
- Chow, T.P.¹ Ramungul, N.² Fedison, J.³ Tang, Y.⁴

6
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- "High Voltage 4H-SiC PiN rectifiers with single implant, multizone JTE termination"
- P. A. Losee, S. Balachandran, L. Zhu, C. Li, J. Seiler, T. P. Chow, I. B. Bhat, and R. J. Gutmann, "High Voltage 4H-SiC PiN rectifiers with single implant, multizone JTE termination," in Proc. Int. Symp. Power Semiconductor Devices and IC, 2004, pp. 301-304.
- (2004) Proc. Int. Symp. Power Semiconductor Devices and IC , pp. 301-304
- Losee, P.A.¹ Balachandran, S.² Zhu, L.³ Li, C.⁴ Seiler, J.⁵ Chow, T.P.⁶ Bhat, I.B.⁷ Gutmann, R.J.⁸

7
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- CBO for 4H and 6H polytype SiC bipolar junction transistors"
- CBO for 4H and 6H polytype SiC bipolar junction transistors," Mat. Sci. Forum, pp. 893-896, 2004.
- (2004) Mat. Sci. Forum , pp. 893-896
- Balachandran, S.¹ Chow, T.P.² Agarwal, A.³ Scozzie, S.⁴ Jones, K.A.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.