Forward active and blocking performance of 4H-SiC bipolar junction transistors

Materials Research Society Symposium Proceedings

Volumn 888, Issue , 2006, Pages 365-370

  Balachandran, S ^a   Chow, T P ^a   Agarwal, A ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT SPACING; SURFACE RECOMBINATION VELOCITY;

COMPUTER SIMULATION; ELECTRIC RESISTANCE; NUMERICAL METHODS; PARAMETER ESTIMATION; SILICON CARBIDE; VELOCITY MEASUREMENT; VOLTAGE CONTROL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33646267430     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S. Balachandran, T.P. Chow, A. Agarwal, C. Scozzie, K.A. Jones, Electron Device Letters 26 (7), 470 (2005).
2. S. Krishnaswami, A. Agarwal, S.H. Ryu, C. Capell, J. Richmond, J. Palmour, S. Balachandran, T.P. Chow, S. Bayne, B. Geil, K. Jones, C. Scozzie, Electron Device Letters 26 (3), 175 (2005).
3. S.H. Ryu, A.K. Agarwal, R. Singh, J.W. Palmour, Electron Device Letters 22 (3), 124 (2001).
4. S. Balachandran, T.P. Chow, A. Agarwal presented at the 2005 International Conference on Silicon Carbide and Related Materials, Pittsburgh, PA, 2005 (unpublished).
5. S. Balachandran, T.P. Chow, A. Agarwal, C. Scozzie, K.A. Jones, Material Science Forum 483-485, 893 (2005).