High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 301-304

  Losee, P A ^a   Balachandran, S K ^a   Zhu, L ^a   Li, C ^a   Seiler, J ^a   Chow, T P ^a   Bhat, I B ^a   Gutmann, R J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ETCHING; ION IMPLANTATION; MASKS; SEMICONDUCTOR JUNCTIONS;

HIGH VOLTAGE DEVICES; MULTI ZONE JUNCTION TERMINATION EXTENSION (MZJTE); PROCESS COMPLEXITY;

ELECTRIC RECTIFIERS;

EID: 4944264373     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/wct.2004.240032     Document Type: Conference Paper

References (12)

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