Charge imbalance at oxide interfaces: How nature deals with it

Materials Science and Engineering: B

Volumn 144, Issue 1-3, 2007, Pages 1-6

  Maurice, J L ^a   Devos, I ^b   Casanove, M J ^c   Carretero C ^a   Gachet, G ^a,b   Herranz, G ^a   Crete D G ^a   Imhoff, D ^d   Barthelemy A ^a   Bibes, M ^b   Bouzehouane, K ^a   Deranlot, C ^a   Fusil, S ^a   Jacquet, É ^a   Domenges B ^e   Ballutaud, D ^b  

^a UNITÉ MIXTE DE PHYSIQUE CNRS THALES   (France)

^b CNRS   (France)

^c CEMES CNRS   (France)

^d UNIVERSITÉ PARIS SUD   (France)

^e NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Ab initio calculations; EELS; Interfaces; Oxides; Space charge; TEM

Indexed keywords

DOPING (ADDITIVES); ELECTRIC INSULATORS; ELECTRIC SPACE CHARGE; OXIDES; SEMICONDUCTOR MATERIALS; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL;

MOBILE CHARGE CARRIERS; UNINTENDED DOPING; VALENCE MISMATCH;

INTERFACES (MATERIALS);

EID: 36148934939     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.07.095     Document Type: Article

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